Method of improving selectivity between silicon nitride and silicon oxide
US6066550A · kind A · utility
17Cited by
7References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of improving selectivity between silicon nitride and silicon oxide. A pad oxide is formed on a substrate. Using low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, a silicon nitride layer is formed on the silicon oxide layer. The silicon nitride is implanted by boron ions to transform into boron nitride. A conventional method is performed to form a shallow trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.