Method of removing carbon contamination on semiconductor substrate
US6066572A · kind A · utility
9Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1999 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Feb 1, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing carbon contamination. On a semiconductor substrate having carbon contamination thereon, a sacrificial oxide layer is formed. During the formation of the sacrificial oxide layer, an agent is introduced to help and improve the growth of the sacrificial oxide layer, and to trap the carbon contamination. The sacrificial oxide layer is then removed, and the carbon contamination is removed with the sacrificial oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.