Method for providing fluorine barrier layer between conductor and insulator for degradation prevention
US6066577A · kind A · utility
35Cited by
15References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1997 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-free silicon dioxide barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.