Ferroelectric dynamic random access memory
US6067244A · kind A · utility
105Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory including an array of memory cells, each of which includes a ferroelectric field effect transistor (FET) as its memory element; and sense and refresh circuitry connected to the array of memory cells to read stored data within each cell by sensing source-to-drain conductivity of the ferroelectric transistor and to refresh the stored data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.