Thermal processor for semiconductor wafers

US6067931A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Mario Ghezzo · Ballston Lake, US
• Timothy D. Page · Cleveland, US
• Thomas Bert Gorczyca · Schenectady, US
• Rolf S. Bergman · Cambridge, US
• Himanshu B. Vakil · Schenectady, US
• Charles Samuel Huey · Willoughby, US
• Seth D. Silverstein · Charlottesville, US

Key dates

• Filing date: Nov 4, 1996
• Grant date: May 30, 2000
• Expiry date: Nov 4, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67115
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A thermal processor for at least one semiconductor wafer includes a reactor chamber having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.