Method of making punch-through field effect transistor

US6069043A · kind A · utility

Assignee

• SILICONIX INCORPORATED · US

Inventors

• Brian H. Floyd · Sunnyvale, US
• Fwu-Iuan Hshieh · Saratoga, US
• Mike F. Chang · Cupertino, US

Key dates

• Filing date: Nov 12, 1997
• Grant date: May 30, 2000
• Expiry date: Nov 12, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

RACTS OF JAPAN -Publication No. 06-252408, published 09/09/94, *abstract and figure*. Patent Abstracts of Japan--vol. 017, No. 050 (E-1314), Jan. 29, 1993 & JP 04 264776 A (Toshiba Corp), Sep. 21, 1992, *abstract figures*. Mader, H., "Electrical Properties of Bulk-Barrier Diodes," IEEE Transactions on Electron Devices, vol. ED-29, No. 11, Nov. 1982, pp. 1766-1771. Mader, H., et al., "Bulk-Barrier Transistor," IEEE Transactions on Electron Devices, vol. ED-30, No. 10, Oct. 1983, pp. 1380-1386. McCowen, A., et al., "Gate controlled bulk-barrier mechanism in an MOS power transistor," IEEE Proceedings, vol. 134, Pt. I, No. 6, Dec. 1987, pp. 165-169. Baliga, B., et al., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET," IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992, pp. 427-429. Syau, T., et al., "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's," IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994, pp. 800-808. LREP FRM Skjerven, Morrill, MacPherson, Frankling & Friel FR2 Klivans; Norman R.