Method of producing planar metal-to-metal capacitor for use in integrated circuits
US6069051A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1996 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Jun 17, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating on chip metal-to-metal capacitors (MMCAP) uses planar processing with a flexible choice of dielectric, thickness and capacitor shape. The method provides a simpler process which has a better yield and more reliable structure by creating a metal-to-metal capacitor on a planar surface, not in deep trenches. In addition to the process simplicity, the method also allows the use of any dielectric materials which are needed by the product designer; e.g., higher or lower dielectric constant and also not limited by high etch rate difference. Because the inventive process is a planar process, there are no corners in the bottom of deep trenches to cause yield and reliability problems. The capacitor area can be adjusted to any shape because there are no edge effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.