Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity

US6069068A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Hazara S. Rathore · Stormville, US
• Hormazdyar M. Dalal · Lagrangeville, US
• Paul S. McLaughlin · Poughkeepsie, US
• Du Nguyen · Danbury, US
• Richard G. Smith · North Aurora, US
• Alexander J. Swinton · Hopewell Junction, US
• Richard A. Wachnik · Mount Kisco, US

Key dates

• Filing date: Oct 8, 1997
• Grant date: May 30, 2000
• Expiry date: Oct 8, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.