Dry etching method and semiconductor device fabrication method
US6069092A · kind A · utility
26Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1998 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.