Semiconductor substrate, semiconductor device and method of manufacturing the same
US6069394A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.