Masahiro Ishida
334Patents
26h-index
162Co-inventors
93Inventor score
Filing activity: Jul 24, 1984 → Dec 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6069394A | Semiconductor substrate, semiconductor device and method of manufacturing the same | Electricity | 272 | Expired |
| US6661839B1 | Method and device for compressing and expanding data pattern | Electricity | 116 | Expired |
| US5655954A | Polishing apparatus | Electricity | 110 | Expired |
| US8920022B2 | Waterproof device and portable timepiece | Electricity | 93 | Active |
| US6358770B2 | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same | Electricity | 78 | Expired |
| US6795496B1 | Jitter measuring device and method | Physics | 77 | Expired |
| USD671066S1 | Automobile tire | General | 61 | Active |
| US6249534A | Nitride semiconductor laser device | Electricity | 55 | Expired |
| USD460402S1 | Automobile tire | General | 53 | Expired |
| US6420197B1 | Semiconductor device and method of fabricating the same | Electricity | 51 | Expired |
| US6274518A | Method for producing a group III nitride compound semiconductor substrate | Emerging Cross-Sectional Technologies | 49 | Expired |
| USD667360S1 | Automobile tire | General | 45 | Active |
| US6617182B2 | Semiconductor device and semiconductor substrate, and method for fabricating the same | Electricity | 44 | Expired |
| US6562701B2 | Method of manufacturing nitride semiconductor substrate | Electricity | 39 | Expired |
| US10004878B2 | Catheter assembly | Human Necessities | 38 | Active |
| US8876773B2 | Indwelling needle assembly | Human Necessities | 36 | Active |
| USD666964S1 | Automobile tire tread | General | 34 | Active |
| USD512014S1 | Automobile tire | General | 33 | Expired |
| US6566231B2 | Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region | Electricity | 31 | Expired |
| US6117700A | Method for fabricating semiconductor device having group III nitride | Electricity | 31 | Expired |
| US6221050A | Self-retaining needle assembly and valve element for use therein | Human Necessities | 31 | Expired |
| US6821805B1 | Semiconductor device, semiconductor substrate, and manufacture method | Electricity | 30 | Expired |
| US6218207A | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same | Electricity | 29 | Expired |
| US6975978B1 | Method and apparatus for fault simulation of semiconductor integrated circuit | Physics | 29 | Expired |
| US6922439B2 | Apparatus for and method of measuring jitter | Electricity | 29 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.