Spin dependent conduction device
US6069820A · kind A · utility
76Cited by
1References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1999 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Feb 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.