Sputtering apparatus simulation method
US6070735A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Calculation is made of a collision point and a collision time of collision between a sputter particle and a surrounding gas particle (step 102). The collision time is compared with a unit time having a predetermined length (step 104). When the collision time is smaller than the unit time, calculation is made of the temperature distribution of a surrounding gas at the collision point with reference to a result of thermal analysis performed in a preceding unit time (step 105). Then, the energy variation of the surrounding gas particle is calculated by the use of the temperature distribution (steps 106-109). After the calculation is performed for all collision coordinates within the unit time, the temperature distribution of the surrounding gas at the collision point. is obtained by thermal analysis with reference to the result of calculation of the energy variation and the unit time is renewed (steps 111-113).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.