Method of making AlInSb by metal-organic chemical vapor deposition
US6071109A · kind A · utility
3Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1999 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Feb 24, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/301
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.