Method for the formation of resist pattern
US6071673A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Aug 21, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for the formation of a pattern, which comprises applying an antireflective coating film-forming composition solution comprising (A) a compound which undergoes crosslinking reaction when irradiated with actinic rays and (B) a dye to a substrate to form a coating film thereon, entirely irradiating the coating film with actinic rays to form an antireflective coating film, applying a resist solution to the antireflective coating film, drying the coated material to form a resist layer, and then subjecting the coated material to lithographic treatment to form a resist pattern on the antireflective coating film. The method enables the formation of a resist pattern having an excellent dimensional accuracy and section shape without causing the formation of an intermixed layer between the resist composition and antireflective coating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.