Method of crown capacitor rounding by oxidant dipping process
US6071790A · kind A · utility
1Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Nov 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
A method of rounding the bottom electrode top surface of a stack crown capacitor by using chemical oxidation is disclosed. First, forming a bottom electrode of a stack crown capacitor on a semiconductor substrate. Next, oxidizing the bottom electrode top surface by using oxidant dipping. Finally, removing the oxide from the bottom electrode top surface to achieve the goal of surface planarization. Thereafter, repeating the above steps to meet the requirement of surface planarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.