Radiation-hardening of microelectronic devices by ion implantation into the oxide and annealing
US6071791A · kind A · utility
19Cited by
6References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 13, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Aug 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The radiation hardness of a microelectronic device is improved by implant dopant ions, such as Si, into an oxide layer. This implantation creates electron traps/recombination centers in the oxide layer. A subsequent anneal remove defects in the active silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.