Method of chemical mechanical planarization using a water rinse to prevent particle contamination
US6071816A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1997 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Aug 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chemical mechanical planarization of a semiconductor device provides a semiconductor device having a device front surface and a device back surface with the device front surface being a top surface of a second metal layer. A first planarizing step planarizes the device front surface with a first medium to expose a device second front surface, where the first medium comprises a first abrasive component and a first chemical solution. A rinsing step then rinses the device back surface with water. A second planarizing step then planarizes the device second front surface with a second medium where the second medium comprises a second abrasive component and a second chemical solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.