Semiconductor device manufacturing method including plasma etching step
US6071828A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 12, 1999 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Jan 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A carbon-containing film, which is made of a carbon-containing material, is adhered to the inner wall of a chamber. A semiconductor substrate is arranged in the chamber whose inner wall has the carbon-containing film adhered thereto. A plasma of a process gas which contains a rare gas is generated in the chamber, and such an electric field as to cause ions contained in the plasma to be attracted to a surface of the semiconductor substrate is applied in order to etch a part of the surface layer of the semiconductor substrate. During the etching, a film which contains a constituent or constituents of an etched film adheres to the surface of the carbon-containing film. The carbon-containing film prevents the peeling off of such an adhering film from the inner wall of the chamber, thereby reducing the generation of particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.