Quenchable VCO for switched band synthesizer applications
US6072371A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B5/1847
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A quenchable VCO that is adapted to be used in switched band synthesizer applications. The VCO may be formed from a heterojunction bipolar transistor (HBT) in a common collector configuration. A quenching circuit which includes a p-i-n diode, is electrically coupled in series with the collector of the HBT. The p-i-n diode is adapted to be monolithically integrated with the HBT. Since the p-i-n diode is electrically connected to the collector of the HBT, as opposed to the base and emitter terminals of the HBT, which forms the main oscillator feedback loop, the Q-factor of the p-i-n diode will have relatively less loading on the phase noise of the HBT oscillator. Moreover, since the p-i-n diode is isolated from the base-emitter junction, the configuration will result in reduced frequency pulling and generation of spurious oscillation and transient effects due to the switching of the p-i-n diode quenched circuit. The use of a p-i-n diode for quenching of VCO also provides other inherent advantages over other types of semi-conductor switches, such as FET, Schottky diodes, PN diodes for quenchable VCO applications because p-i-n diodes are relative insensitive to RF and noise modulation.…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.