Method and apparatus for X-ray topography of single crystal ingot
US6072854A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/20008
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is disclosed a method for X-ray topography wherein an X-ray topographic image is obtained for an unprocessed single crystal ingot as it is after being produced by Czochralski method to observe crystal dislocations, thereby finding a boundary between a dislocation-appearing area and a dislocation-disappearing area. A scanning stage (34) travels along a direction X to position the observation area of the silicon ingot (22) at the X-ray irradiation site. The silicon ingot (22) is .phi.-rotated on its axis so that the predetermined crystal lattice plane erects vertically. A traveling table (46) travels along a direction Y to align the rotation center (49) of an .omega.-rotation table (48) with the peripheral surface of the ingot (22). The .omega.-rotation and .phi.-rotation are precisely adjusted while observing diffracted X-rays with an X-ray television camera (26). Then, an X-ray recording medium (66) is mounted on the scanning stage (34). X-rays from an X-ray source (24) are incident on the peripheral surface of the ingot (22) and the scanning stage (34) is scanned by a given scanning width while recording diffraction images on the X-ray recording medium (66), thereby obtainin…
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