Method of forming a via with plasma treatment of SOG
US6074941A · kind A · utility
6Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a via is provided comprising a plasma treatment at the spin-on-glass layer after forming the unlanding via. The plasma comprises hydrogen and a second gas. The mist containing in the spin-on-glass layer is damaged and removed away.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.