Method of fabricating a node contact window of DRAM
US6074955A · kind A · utility
8Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Nov 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a node contact window. A substrate having devices and a first dielectric layer is provided. Bit lines having spacer are formed on the first dielectric layer and a second is formed on the first dielectric layer. A hard material layer is then formed on the second dielectric layer. An opening is formed within the second dielectric layer to expose the spacer and the first dielectric layer. A polysilicon spacer is then formed on the sidewalls of the opening. A node contact window is formed by etching through the first dielectric layer to expose the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.