Method and device for reading a non-erasable memory cell
US6075718A · kind A · utility
5Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The method comprises the steps of detecting the trailing edge of an initialization signal, and generating a read bias signal and a read activation signal for the cell, when the trailing edge of the initialization signal is detected. The signals of read bias and read activation have a ramp-like leading edge and both signals are disabled when reading of the cell is completed. Thereby, phenomena of soft-writing of the cell are avoided, and risks of erroneous readings are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.