Patent · US Expired

Method of rapid thermal processing (RTP) of ion implanted silicon

US6077751A · kind A · utility

10Cited by

20References

14Claims

0Family size

Assignee

Steag RTP Systems GmbH · DE

Inventors

Steven Marcus · Tempe, US
Frederique Glowacki · Ulm, DE
Barbara Froeschle · Blaustein, DE

Key dates

Filing date	Jan 29, 1998
Grant date	Jun 20, 2000
Priority date	—
Expiry date	Jan 29, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0227
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for rapid thermal processing (RTP) of a silicon substrate, the substrate having a surface with a plurality of areas implanted with dopant ions, comprising a) contacting the surface with a reactive gas, b) processing the substrate for a first process time and temperature sufficient to produce a significant protective layer upon the surface, and c) annealing the substrate for a second process time and temperature sufficient to activate the dopant material so that the sheet resistivity of the implanted areas is less than 500 ohms/square, where the first and second processing time and temperature are insufficient to move the implanted dopant ions to a depth of more than 80 nanometers from the surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.