Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide
US6077753A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1998 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Jul 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing the bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of the first conductivity type electrically connected to the base, the base and the emitter each being electrically connected to a metallic interconnecting layer (31,33), the interconnecting layers (31,33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.