Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer
US6077783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of polishing a first layer of a semiconductor wafer down to a second layer of the semiconductor wafer is disclosed. One step of the method includes heating a back surface of the semiconductor wafer to a first temperature level so as to cause a front surface of the semiconductor wafer to have a second temperature level. Another step of the method includes polishing the semiconductor wafer whereby material of the first layer is removed from the semiconductor wafer. The polishing step causes the second temperature level of the front surface to change at a first rate as the material of the first layer is being removed. The method also includes the step of halting the polishing step in response to the second temperature level of the front surface changing at a second rate that is indicative of the second layer being polished during the polishing step. Polishing systems are also disclosed which detect a polishing endpoint for a semiconductor wafer based upon heat conducted through the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.