Indium gallium nitride light emitting diode
US6078064A · kind A · utility
153Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable to a blue light emitting diode, where InGaN is used as the light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.