Chemical vapor deposition chamber having an adjustable flow flange
US6080241A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Sep 2, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition (CVD) reactor for growing epitaxial layers on wafers includes a chamber having an interior region and exterior region. The chamber includes one or more apertures extending therethrough for passing reactant gases from the exterior region of the chamber to the interior region of the chamber. The CVD reactor also includes one or more reactant gas injectors which are releasably secured to the one or more apertures in the chamber. Each reactant gas injector includes one or more passageways for passing reactant gas through the apertures in the chamber and into the interior region of the chamber. At least one of the injectors is releasably secured to the apertures so that the injector(s) may be removed from the aperture(s) of the chamber without entering the interior region of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.