Tingkai Li
97Patents
22h-index
43Co-inventors
88Inventor score
Filing activity: Jun 6, 1990 → May 18, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6849891B1 | RRAM memory cell electrodes | Physics | 174 | Expired |
| US7968419B2 | Back-to-back metal/semiconductor/metal (MSM) Schottky diode | Electricity | 109 | Active |
| US7029924B2 | Buffered-layer memory cell | Physics | 94 | Expired |
| US7598108B2 | Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers | Electricity | 77 | Active |
| US5527567A | Metalorganic chemical vapor deposition of layered structure oxides | Electricity | 68 | Expired |
| US7407858B2 | Resistance random access memory devices and method of fabrication | Electricity | 61 | Active |
| US6048740A | Ferroelectric nonvolatile transistor and method of making same | Electricity | 58 | Expired |
| US6457479B1 | Method of metal oxide thin film cleaning | Emerging Cross-Sectional Technologies | 57 | Expired |
| US7378286B2 | Semiconductive metal oxide thin film ferroelectric memory transistor | Electricity | 52 | Expired |
| US7060586B2 | PCMO thin film with resistance random access memory (RRAM) characteristics | Physics | 52 | Expired |
| US7633108B2 | Metal/semiconductor/metal current limiter | Electricity | 46 | Active |
| US7446010B2 | Metal/semiconductor/metal (MSM) back-to-back Schottky diode | Electricity | 43 | Active |
| US6531324B2 | MFOS memory transistor & method of fabricating same | Electricity | 36 | Expired |
| US7271081B2 | Metal/ZnOx/metal current limiter | Electricity | 32 | Expired |
| US6080241A | Chemical vapor deposition chamber having an adjustable flow flange | Chemistry; Metallurgy | 32 | Expired |
| US6281022A | Multi-phase lead germanate film deposition method | Electricity | 30 | Expired |
| US5102836A | Ceramic materials with low thermal conductivity and low coefficients of thermal expansion | Chemistry; Metallurgy | 27 | Expired |
| US7338907B2 | Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications | Electricity | 27 | Expired |
| US6939724B2 | Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer | Physics | 26 | Expired |
| US7256429B2 | Memory cell with buffered-layer | Physics | 25 | Expired |
| US7303971B2 | MSM binary switch memory device | Electricity | 23 | Expired |
| US7608514B2 | MSM binary switch memory | Electricity | 22 | Active |
| US6534326B1 | Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films | Physics | 20 | Expired |
| US6190925A | Epitaxially grown lead germanate film and deposition method | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6303502A | MOCVD metal oxide for one transistor memory | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.