Method of patterning photoresist using precision and non-precision techniques
US6080533A · kind A · utility
8Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Mar 10, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Mar 10, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.