Formation of thin spacer at corner of shallow trench isolation (STI)
US6080638A · kind A · utility
7Cited by
11References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1999 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Feb 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to reduce to reduce DRAM capacitor STI junction leakage current. A Shallow Trench Isolation opening is formed, within this opening Field Oxide is deposited. The top surface of the FOX is etched down and a second layer of oxide is deposited over the FOX and the adjacent active regions. This second layer of oxide is etched bringing the top surface down to below the level of the top surface of the surrounding active areas but leaving spacers where the top surface of the FOX intersects with the active areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.