Heterojunction bipolar transistor with ballast resistor
US6081003A · kind A · utility
5Cited by
5References
5Claims
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Key dates
| Filing date | Dec 4, 1997 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Dec 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor .beta. from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed between the ballast resistor layer and the n-AlGaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.