Magnetron sputtering apparatus for single substrate processing
US6083364A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The purpose of this invention is to provide a magnetron sputtering apparatus capable of attaching masks on disk substrates and capable of conducting sputtering while disk substrates are being rotated on a central axis without complicated mechanisms or complicated processes. For this purpose, in the sputtering apparatus of this invention, a magnetic field generating means is provided above a sputtering chamber 11 so as to apply magnetic field in the sputtering chamber 11 providing discharge space. A target 21 is arranged at an upper portion of sputtering chamber 11 so that the magnetic field by generated the magnetic field generating means is applied to the target. A disk transport chamber 12 is provided which is connected to the sputtering chamber 11 through an opening 32 formed in a bottom wall 30. In disk transport chamber 12, a disk pusher 34 is provided on which a disk substrate 31 is placed for depositing sputter film. Disk pusher 34 transports the substrate 31 to the opening 32 of the sputtering chamber 11 and rotates the disk substrate 31 in the plane of the disk pusher. In the sputtering chamber 11, a rotation center mask 27 is provided which makes contact with the upper ce…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.