Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition
US6083572A · kind A · utility
3Cited by
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26Claims
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Key dates
| Filing date | Feb 27, 1998 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Feb 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.