Gary W. Ray
19Patents
13h-index
26Co-inventors
74Inventor score
Filing activity: Nov 12, 1991 → Oct 27, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7166531B1 | VLSI fabrication processes for introducing pores into dielectric materials | Emerging Cross-Sectional Technologies | 119 | Expired |
| US5886410A | Interconnect structure with hard mask and low dielectric constant materials | Electricity | 66 | Expired |
| US6018187A | Elevated pin diode active pixel sensor including a unique interconnection structure | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6281535A | Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell | Electricity | 44 | Expired |
| US6027995A | Method for fabricating an interconnect structure with hard mask and low dielectric constant materials | Electricity | 39 | Expired |
| US6387736B1 | Method and structure for bonding layers in a semiconductor device | Electricity | 26 | Expired |
| US5342808A | Aperture size control for etched vias and metal contacts | Electricity | 24 | Expired |
| US6215164A | Elevated image sensor array which includes isolation between uniquely shaped image sensors | Electricity | 22 | Expired |
| US6114739A | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode | Electricity | 16 | Expired |
| US8062983B1 | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles | Electricity | 16 | Active |
| US5200360A | Method for reducing selectivity loss in selective tungsten deposition | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6396118B1 | Conductive mesh bias connection for an array of elevated active pixel sensors | Electricity | 14 | Expired |
| US7629224B1 | VLSI fabrication processes for introducing pores into dielectric materials | Emerging Cross-Sectional Technologies | 14 | Active |
| US6051867A | Interlayer dielectric for passivation of an elevated integrated circuit sensor structure | Electricity | 12 | Expired |
| US6016011A | Method and apparatus for a dual-inlaid damascene contact to sensor | Electricity | 11 | Expired |
| US6586812B1 | Isolation of alpha silicon diode sensors through ion implantation | Electricity | 4 | Expired |
| US6083572A | Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition | Electricity | 3 | Expired |
| US7972976B1 | VLSI fabrication processes for introducing pores into dielectric materials | Emerging Cross-Sectional Technologies | 3 | Active |
| US6759724B2 | Isolation of alpha silicon diode sensors through ion implantation | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.