Method of patterning a semiconductor device
US6083767A · kind A · utility
15Cited by
18References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1998 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | May 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming semiconductor devices involves defining a pattern of microspheres on a first structure and transferring that pattern of microspheres to a semiconductor structure. The microspheres may then be used as a mask to define features on the semiconductor structure. In this way, it is possible to form semiconductor devices without necessarily using a stepper. This may result in substantial capital savings in semiconductor manufacturing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.