Patent · US Expired

Ion implanter

US6084240A · kind A · utility

7Cited by
4References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 19, 1998
Grant dateJul 4, 2000
Priority date
Expiry dateAug 19, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/2001
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A temperature monitor is included inside an ion implanting chamber to constantly monitor the wafer temperature during ion implantation. The measured temperature signal is sent to a central control system through an interface circuit. When an abnormal temperature is detected, the central control system automatically ceases the ion implantation operation and triggers an alarm for operators.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.