Semiconductor light emitting device with carrier diffusion suppressing layer
US6084251A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor light emitting device improved in static characteristics such as operational current and prolonged in service life. On an n-type GaAs substrate are sequentially grown an n-type GaAs buffer layer having a thickness of 0.3 .mu.m; an n-type AlGaInP cladding layer having a thickness of 1 .mu.m; and an active layer having a MQW structure of GaInP/AlGaInP. Then, a carrier diffusion suppressing layer having a thickness of 50 nm is grown on the active layer at a reduced V/III ratio. On the carrier diffusion suppressing layer are sequentially grown a p-type AlGaInP cladding layer having a thickness of 1 .mu.m; a p-type GaInP layer having a thickness of 0.1 .mu.m; and a p-type GaAs current cap layer having a thickness of 0.3 .mu.m. Then, the p-type AlGaInP cladding layer, p-type GaInP layer, and p-type GaAs current cap layer are selectively etched by typically photolithography, to form a mesa structure, and an n-type GaAs current cap layer is grown to be laminated on both sides of the mesa structure, to form a semiconductor light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.