Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6084257A · kind A · utility
21Cited by
31References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1995 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | May 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S73/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.