Method for forming metallic capacitor
US6086951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1999 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jun 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metallic capacitor. The method includes forming a lower electrode for forming the capacitor and a metal conductive line over an inter-layer dielectric such that there are gaps between and on the sides of the lower electrode and the metal conductive line. Thereafter, a first oxide layer is formed that fills the gap, and then a second oxide layer is formed over the inter-layer dielectric. The second oxide layer is later patterned to form a cap oxide layer having an opening that exposes a portion of the lower electrode. Subsequently, a thin dielectric layer is formed over the lower electrode and the cap oxide layer. Finally, an upper electrode is formed over the thin dielectric layer filling the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.