Positive-working photoresist composition
US6087063A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula EQU .brket open-st.CH.sub.2 --CR.sup.1 (--CO--O--CR.sup.2 R.sup.3 R.sup.4).brket close-st., in which R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 and R.sup.3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R.sup.4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.