Method of making an interconnect using a tungsten hard mask
US6087269A · kind A · utility
156Cited by
7References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 20, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Apr 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect layer is fabricated using a tungsten hard mask by forming a tungsten based layer over an aluminum based layer. A photoresist layer is deposited over the tungsten based layer and patterned. The tungsten based layer is patterned by applying a fluorine-based etchant using the photoresist layer as an etch mask. Then the aluminum based layer is patterned by applying a chlorine based etchant using the tungsten based layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.