Method for fabricating semiconductor devices having an HDP-CVD oxide layer as a passivation layer
US6087278A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1999 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jun 8, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for fabricating a semiconductor device, by which passivation layers are formed with good step coverage to prevent crack or void from being occurred in high aspect ratio of metallization layers and the time for performing the processes can be decreased to enhance the productability and the yield of the device. The method is performed as follows. Over a substrate having completed metallization layers, an oxide layer is formed as a first passivation layer by high-density plasma chemical vapor deposition (HDP-CVD). On the HDP-CVD oxide layer, a nitride layer is formed as a second passivation layer by plasma enhanced chemical vapor deposition (PECVD) or HDP-CVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.