Plasma treating device
US6087614A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Oct 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32284
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.