Semiconductor thin film and semiconductor device
US6087679A · kind A · utility
174Cited by
52References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jul 22, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.