Rare-earth schottky diode structure
US6087702A · kind A · utility
6Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Apr 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming a metal layer over the rare-earth containing layer. The Schottky diode structure with a rare-earth containing layer has the properties of high-temperature stability, high Schottky barrier height (SBH), and low reverse leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.