Low barrier ohmic contact for semiconductor light emitting device
US6087725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Sep 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
Abstract
On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.