Ryoko Miyanaga
36Patents
9h-index
40Co-inventors
71Inventor score
Filing activity: Sep 28, 1998 → May 31, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7507999B2 | Semiconductor device and method for manufacturing same | Emerging Cross-Sectional Technologies | 127 | Expired |
| US6995397B2 | Semiconductor device | Electricity | 109 | Expired |
| US8022502B2 | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element | Emerging Cross-Sectional Technologies | 47 | Active |
| US6720586B1 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 46 | Expired |
| US6169296A | Light-emitting diode device | Electricity | 37 | Expired |
| US6466597B1 | Semiconductor laser device | Electricity | 18 | Expired |
| US8445319B2 | Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element | Emerging Cross-Sectional Technologies | 13 | Active |
| US6911351B2 | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same | Electricity | 12 | Expired |
| US6995396B2 | Semiconductor substrate, semiconductor device and method for fabricating the same | Electricity | 11 | Expired |
| US6586774B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 9 | Expired |
| US6324200A | Semiconductor laser device | Electricity | 9 | Expired |
| US6798811B1 | Semiconductor laser device, method for fabricating the same, and optical disk apparatus | Electricity | 8 | Expired |
| US6072762A | Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations | Physics | 8 | Expired |
| US7160748B2 | Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device | Electricity | 8 | Expired |
| US7217954B2 | Silicon carbide semiconductor device and method for fabricating the same | Electricity | 7 | Expired |
| US6709881B2 | Method for manufacturing semiconductor and method for manufacturing semiconductor device | Electricity | 7 | Expired |
| US7709403B2 | Silicon carbide-oxide layered structure, production method thereof, and semiconductor device | Electricity | 6 | Active |
| US7212556B1 | Semiconductor laser device optical disk apparatus and optical integrated unit | Electricity | 6 | Expired |
| US8309946B2 | Resistance variable element | Electricity | 6 | Active |
| US6087725A | Low barrier ohmic contact for semiconductor light emitting device | Electricity | 5 | Expired |
| US7462540B2 | Silicon carbide semiconductor device and process for producing the same | Electricity | 4 | Active |
| US7092423B2 | Semiconductor laser device, optical disk apparatus and optical integrated unit | Electricity | 4 | Expired |
| US8253136B2 | Nonvolatile semiconductor memory device and manufacturing method thereof | Electricity | 3 | Active |
| US6900483B2 | Semiconductor device and method for manufacturing the same | Electricity | 3 | Expired |
| US6977186B2 | Method for manufacturing semiconductor laser optical device | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.