Spot-to-spot stitching in electron beam lithography utilizing square aperture with serrated edge
US6090528A · kind A · utility
Inventors
Key dates
| Filing date | Oct 27, 1999 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Oct 27, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention relates to the field of electron beam lithography. More particularly, the invention relates to shaped beam lithography for generating variable-shaped spots on photoresist for use in integrated circuit manufacturing processes. According to an aspect of the invention, an electron beam lithography method is provided, having the steps of generating an electron beam and directing it through a first square aperture in a first lamina, the first square aperture having a first serrated edge. According to a further aspect of the invention, the beam emanating from the first square aperture in the first lamina is focused onto a second square aperture in a second lamina having a second serrated edge. The spot generated has a subresolution edge zone induced at least in part by the first serrated edge and/or the second serrated edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.